Currently, indium is used in a wide range of electric and electronic applications. The amount of indium consumed is largely a function of worldwide liquid crystal display (LCD) production 2. The increase of LCD-panel products has enhanced the demand of transparent electrodes from indium tin …

بیشتر

A method for manufacturing an indium-tin-iron catalyst that is used to obtain carbon nanocoils that have an external diameter of 1000 nm or less, the method comprising a first process that forms an organic solution by mixing an indium-containing organic compound and a tin-containing organic compound with an organic solvent, a second process that forms an organic film by coating a substrate ...

بیشتر

indium oxide and tin oxide powders are blended together then compacted by hot or cold isostatic pressing or by sintering to make ITO sputtering targets (compressed blocks of ITO powder). ITO may be formed directly during a coating process, e.g., reactive sputtering from indium-tin alloy targets in the presence of oxygen.

بیشتر

A tin/indium alloy plating solution not containing any cyanide and serving as a substitute for tin/lead alloy plating is provided. The tin/indium alloy plating solution is a weakly alkaline aqueous solution for tin/indium alloy electroplating, prepared by adding, as metal salts, a tetravalent tin salt of metastannic acid and a trivalent indium salt of an organosulfonic acid, further adding a ...

بیشتر

The global Indium Tin Oxide (ITO) market was valued at 2759.25 Million USD in 2020 and will grow with a CAGR of 4.89% from 2020 to 2027. …

بیشتر

A laminated diffractive optical element includes a first resin layer having a first lattice shape and a second resin layer having a second lattice shape. The first resin layer and the second resin layer are laminated in this order on a first substrate so that the lattice shapes oppose each other. The first resin layer contains a resin and transparent conductive particles.

بیشتر

Indium Tin Oxide. ITO films deposited on glass substrates by magnetron sputtering technique, under different temperatures, below 200°C were found to have band gap energy in the range from 4.1 to 4.4 eV depending on the growth conditions (temperature, oxygen concentration) (Mudryi et al., 2007). From: Reference Module in Materials Science and ...

بیشتر

ITO is reportedly a ternary composition of indium, tin and oxygen in varying proportions, typically as 74% indium, 18% oxygen and 8% tin by weight. According to the inventors, one advantage of ITO coated substrates is that they are transparent at visible wavelengths but opaque in the IR and UV ranges. Patent application accessed on Sept. 28, 2018.

بیشتر

1. Surface-modified indium-tin oxides, characterised by. 2. Process for producing the surface-modified indium-tin oxides according to claim 1, characterised in that the oxides are sprayed with the surface-modifying agent whilst being mixed and the mixture is then heat treated at a temperature of 50 to 400° C. for a period of 1 to 6 hours.

بیشتر

Indium tin oxide (ITO) thin film is a highly degenerate n-type semiconductor which has a low electrical resistivity of 2 – 4.3 x 10-24 Ω-cm [Alam and Cameroon, 2000]. The low resistivity value of ITO films is due to a high carrier * Corresponding author : . 1 Department of Physics, University of Dhaka, Dhaka-1000 ...

بیشتر

Indium–tin stearate precursor was successfully synthesized by a direct reaction between metals (indium and tin) and molten stearic acid under a nitrogen atmosphere at 260 °C for 3 h for the first time. Nearly, monodisperse ~7 nm indium tin oxide (ITO) nanocrystals without any agglomeration were efficiently synthesized by pyrolysis of the as-synthesized precursors without using additional ...

بیشتر

Indium Corporation's Durafuse™ LT Receives Electronics Assembly Materials Innovation of the Year Award October 27, 2021. Indium Corporation earned Electronics Maker's Electronics Assembly Materials Innovation of the Year award for its patent-pending Durafuse™ LT alloy technology during a digital ceremony on Oct. 27.. Electronics Maker's Best of Industry Awards, now heading into …

بیشتر

US-2003178752-A1 chemical patent summary.

بیشتر

US5580520A US08/334,699 US33469994A US5580520A US 5580520 A US5580520 A US 5580520A US 33469994 A US33469994 A US 33469994A US 5580520 A US5580520 A US 5580520A Authority US United States Prior art keywords lead indium alloy tin silver Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.

بیشتر

Abstract. A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide.

بیشتر

reduction of indium oxide to indium metal in molecular 20 hydrogen requires temperatures in excess of380 degrees C. to achieve a reasonable reaction rate. These high temperatures are often not compatible with the types of devices that are typically hybridized. The prior art suggests that indium tin oxide (ITO) can be

بیشتر

Patents for C22B 58 - Obtaining gallium or indium (821) 12/2013: 12/25/2013: CN103468977A Method for selectively leaching germanium and gallium from complex smelting slag with germanium and ...

بیشتر

Indium Tin Oxide (ITO) In order to etch ITO it is needed to reduce it to a metallic state. The reactions are: Zn + HCl = H: 2 + ZnCl2 - 6 - Miscellaneous Etchants Chapter 1.10 : H: 2: reduces ITO . SnO. 2 + H. 2 = Sn or SnOx with x smaller than 1 . Sn + HCl = H. 2 + SnCl. 4.

بیشتر

Jang et al. "Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p-In0.15Ga0.85N/p-GaN layer" Journal of Applied Physics 101(1):013711-4 (2007). (APP,APP) Google Patents

بیشتر

An etch method includes providing a material layer consisting essentially of a group member selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In.sub.x Sn.sub.y O.sub.z where z is substantially greater than zero but less than and where …

بیشتر

Future Foldable OLED Displays will Replace Indium Tin Oxide (ITO) with Breakthrough Graphene ... Patent Applications (2001) 1B. Continuation Patents (66) 2. Granted Patents (1491) 3. Patently ...

بیشتر

JP-5754580-B2 chemical patent summary.

بیشتر

： Suspensions and powders based on indium tin oxide are prepared by a method in which indium tin oxide precursors are precipitated from solutions in one or more solvents in the presence of one or more surface-modifying components, the solvent(s) are removed from the precipitate, which is then calcined, one or more surface-modifying components and one or more solvents are …

بیشتر

On Nov. 5, Iroh filed a provisional patent application with the U.S. Patent Office for a polymer-based film with remarkable properties. The film is highly transparent and electrically conductive.

بیشتر

Indium Corporation Expert Receives SMTA Award November 2, 2021. Indium Corporation's Ron Lasky, Ph.D., PE, senior technologist, was presented with the Surface Mount Technology Association's (SMTA) Member of Technical Distinction Award following a recognition dinner during SMTA International on Monday, Nov. 1 in Minneapolis, Minn., U.S. "SMTA is the best …

بیشتر

US2649368A US189045A US18904550A US2649368A US 2649368 A US2649368 A US 2649368A US 189045 A US189045 A US 189045A US 18904550 A US18904550 A US 18904550A US 2649368 A US2649368 A US 2649368A Authority US United States Prior art keywords bismuth indium tin alloy alloys cadmium Prior art date Legal status (The legal status is an assumption and is not a …

بیشتر

European Patent EP2737530 . Kind Code: B1 ... 10.1039/c1jm10514k PARK Y T ET AL: "Fast switching electrochromism from colloidal indium tin oxide in tungstate-based thin film assemblies", ELECTROCHIMICA ACTA, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 55, no. 9, 30 March 2010 (), pages 3257-3267, XP026924571, ...

بیشتر

A layer of material, such as crystalline indium tin oxide (ITO), is formed on top of a substrate by heating the material to a high temperature, while a temperature increase of the substrate is limited such that the temperature of the substrate does not exceed a predetermined temperature. For example, a layer including amorphous ITO can be deposited on top of the substrate, and the amorphous ...

بیشتر

Indium Tin Oxide (ITO) Sputtering Targets market is segmented by region (country), players, by Type, and by Application. Players, stakeholders, and other participants in the global Indium Tin Oxide (ITO) Sputtering Targets market will be able to gain the upper hand as they use the report as a ...

بیشتر

1. A multiple-pane insulating glazing unit having a between-pane space and two opposed external pane surfaces, a desired one of the two external pane surfaces bearing a coating comprising both a first indium tin oxide film and a second indium tin oxide film, the second indium tin oxide film being located over the first indium tin oxide film, the second indium tin oxide film being in contact ...

بیشتر